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Nghiên cứu của FDA đưa ra kết luận rằng germani, khi sử đụng như là chất bổ sung dinh dưỡng, "thể Helloện một số nguy hiểm tiềm tàng cho sức khỏe con người".[six]
hiK are classified as the dielectric continual and Actual physical thickness on the higher-k substance respectively. For Ge and III-V devices, the ITRS requires a manufacturable EOT
Not like lots of the basic factors, there aren't quite a few germanium compounds that have found a use. Germanium dioxide can be employed like a catalyst in the production of the PET plastic Utilized in several bottles, while it is never used for this in Europe as well as the US.
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Renierite Germaniul este creat de nucleosinteza stelelor, predominant prin procesul-s in ramurile stelelor gigant asimptotice.
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The steel-insulator-semiconductor (MIS) approach has revealed it might efficiently decrease the Call resistance to n-type Ge. These n-Ge low resistance ohmic contacts are needed to create Ge NMOS gadgets which could complete on par with Ge PMOS products now recognized.
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)) concerning the source as well as drain, even at quite minimal electric industry. The channel is sandwiched by substantial bandgap barrier materials (SiGe or Si) to lessen the leakage. In such cases, the Ge channel is biaxially compressive-strained by the barrier layers. The barrier levels will have to also supply a VBO adequately superior to confine holes inside the Ge channel. A modulation doping layer, separated by spacer or barrier layer, gets rid of the ionized impurity scattering with holes In the Ge channel.
four).[5] Organogermanii de suggestion R4Ge (unde R este un alchil) precum tetrametilgermanul si tetraetilgermanul sunt accesate prin intermediul celor mai ieftini precursori, tetraclorura de germaniu si nucleofili de alchil. Hidrizi organici de germaniu precum izobutilgerman au fost descoperiți ca fiind mai puțin periculoși și pot fi utilizați ca un lichid substitut pentru gazul harmful de germaniu ăn aplicațiile semiconductoare.
layer is decided by its capacity to realize the above stringent prerequisite. In the case of Ge, two IL
Because of Mendeleev's prediction of ekasilicon, germanium's place on the periodic desk was confirmed because of the very similar Homes predicted and comparable Attributes deduced from analyzing the mineral.
We've calculated the Seebeck impact of one-crystalline samples of germanium with intrinsic electrical conduction of each p – and n – types underneath large force to 20 GPa at space temperature. We have now established that applied strain strongly shifts the conduction to p – type in the initial semiconductor period, and then, the p – type conduction is more conserved from the metal β-Sn-type stage. Upon strain releasing, the β-Sn-type phase transformed for the st12 metastable polymorph (Ge-III) Together with the n – type semiconducting conductivity. Now we have addressed the shift for the p–type conduction while in the cubic-diamond period to your force-driven splitting on the overlapped “weighty” and “gentle” holes bands, stimulating a cost transfer for the “mild” band with a lot more mobile hole carriers.